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Ka Hana Maʻamau o Al2O3 Ceramic Wafer Chuck
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Papa Seramika Lako Semiconductor i Hoʻopilikino ʻia ʻo ST.CERA
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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12-'Īniha Alumina Vacuum Chuck no ka hana ʻana i ka wafer 300mm
Ua hana ʻia ka mīkini hoʻomaʻemaʻe 12-'īniha a St.Cera me ka pololei mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃) no ka lawelawe ʻana i ka wafer 300mm. Loaʻa i ka mīkini kahi ʻili maikaʻi me nā grooves (ka laulā o ke groove 0.5–1.0 mm, pitch 2–3 mm) e hōʻoia i ka hoʻolaha like ʻana o ka vacuum ma ke anawaena holoʻokoʻa 300mm. Mālama ʻia ka pālahalaha i loko o 5 μm, e hiki ai ke hoʻopaʻa ʻia ka wafer me ka ʻole o ka warp i ka wā e dicing ai, wili ʻana i ka ʻaoʻao hope, a me ka nānā ʻana. ʻO ka ikaika flexural kiʻekiʻe o ka mea (361 MPa) a me ka paʻakikī (16 GPa) e hōʻoia i ka paʻa o ka dimensional no ka manawa lōʻihi ma lalo o nā pōʻaiapuni vacuum pinepine.
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Nā ʻāpana hoʻokaʻawale seramika no nā lako hana Semiconductor Probe
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Mea lawe lako Semiconductor papa seramika
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Nā ʻāpana seramika lako Semiconductor
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Apo Sila Seramika Alumina Maʻemaʻe Kiʻekiʻe no ke Sila ʻana o ke Keʻena Mahana Kiʻekiʻe
Ua hoʻolālā ʻia ke apo sila keramika a St.Cera ma ke ʻano he koho ʻē aʻe i nā apo O-polymer i nā wahi koʻikoʻi kahi e hōʻino ai nā elastomers. Hana ʻia mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃), hoʻohana ʻia kēia apo sila paʻa i nā noi sila static - i hui pū ʻia me kahi metala palupalu a i ʻole gasket graphite - e hāʻawi i ka vacuum hilinaʻi a i ʻole ka paʻa kinoea ma nā mahana a hiki i 800°C a ma nā wahi plasma a i ʻole nā kemika. Hāʻawi ka mea i ka ʻole o ka outgassing, ka ikaika compressive kiʻekiʻe (ka ikaika flexural ma lalo 361 MPa), a me ka inertness kemika (kū i nā halogens, nā waikawa, a me nā alkalis koe wale nō HF). ʻO nā ʻili sila i hoʻopaʻa ʻia me ka pololei (flatness ≤5 μm, surface roughness Ra ≤0.2 μm) e hōʻoia i ka pili paʻa ʻana me nā metala pili a i ʻole nā mea keramika.
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ʻO ke apo hoʻoikaika kino o ke keʻena Alumina maʻemaʻe kiʻekiʻe no nā ʻōnaehana Plasma Etch & CVD
ʻO ke apo hoʻoikaika lumi o St.Cera kahi ʻāpana hana koʻikoʻi i hoʻohana ʻia i nā lako etch plasma, CVD, a me PVD semiconductor. Hana ʻia mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃), hoʻopuni ke apo i ka lihi wafer e hoʻopaʻa i ka plasma a hoʻonui i ka hoʻolaha ʻana o ka ion angular, no laila e hoʻomaikaʻi ana i ka like ʻana o ka etch ma ka ʻili wafer. Hāʻawi ka mea i ke kū'ē plasma kūikawā, ka ikaika dielectric kiʻekiʻe (15 × 10⁶ V / m), a me ke kūpaʻa wela a hiki i 1600 ° C, e hōʻoiaʻiʻo ana i ka hilinaʻi lōʻihi i nā wahi plasma fluorine- a i ʻole chlorine. ʻO ka ID/OD honua pololei a me ka palahalaha (≤10 μm) e hiki ai ke hoʻonohonoho pololei i ka lihi wafer, e hōʻemi ana i nā hemahema lihi a me ka hanauna ʻāpana.
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Apo Seramika Alumina Maʻemaʻe Kiʻekiʻe no nā Keʻena Hana CVD / PVD
Ua hoʻolālā kūikawā ʻia ke apo keramika a St.Cera no ka hoʻohana ʻana i loko o nā keʻena hana CVD (Chemical Vapor Deposition) a me PVD (Physical Vapor Deposition). Hana ʻia mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃), lawelawe kēia apo ma ke ʻano he liner keʻena, apo focus, a i ʻole ka ʻāpana kit hana e hoʻopaʻa i ka plasma a pale i nā paia o ke keʻena mai ka erosion. Hāʻawi ka mea i ke kūpaʻa plasma maikaʻi loa, ka ikaika dielectric kiʻekiʻe (15 × 10⁶ V/m), a me ke kūpaʻa wela a hiki i 1600 °C, e hōʻoiaʻiʻo ana i ke ola lawelawe lōʻihi i nā wahi plasma fluorine-based aggressive. ʻO nā hoʻomanawanui dimensional pololei (± 0.05 mm ma ID/OD) a me ka flatness (≤10 μm) e hiki ai ke hoʻonohonoho mau i ka lihi wafer, e hoʻomaikaʻi ana i ka like ʻana o ka deposition a me ka hōʻemi ʻana i ka hanauna ʻāpana.
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ʻO Porous Ceramic Vacuum Chuck no ka lawelawe ʻana i ka wafer warped
Ua hana ʻia ka chuck keramika porous a St.Cera mai ka alumina maʻemaʻe kiʻekiʻe me ka porosity hāmama like o 30-45% a me nā nui o nā pore mai 10 a 100 μm. ʻAʻole e like me nā chucks grooved maʻamau, hāʻawi ka ʻili porous i ka vacuum i hoʻolaha ʻia ma ka ʻaoʻao hope o ka wafer holoʻokoʻa, e paʻa pono ana i nā wafers warped, lahilahi, a i ʻole singulated me ka ʻole o ka hāpai ʻana o ka lihi a haki paha. ʻO ka vacuum mālie (hiki ke hoʻololi ʻia ma o ka restrictor) e pale aku i ka māka ʻaoʻao hope.
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ʻO Alumina-Based Porous Ceramic Vacuum Chuck no ka lawelawe ʻana i ka wafer lahilahi
Hana ʻia ka chuck porous alumina a St.Cera mai ka 99.6% Al₂O₃ kiʻekiʻe-maʻemaʻe me ka porosity hāmama i kāohi ʻia o 30-45% a me ka nui o ka pore like mai 10 a 50 μm. ʻAʻole e like me nā chucks grooved, hāʻawi ka ʻili porous i ka vacuum i hoʻolaha ʻia ma ka ʻaoʻao hope o ka wafer holoʻokoʻa, e hoʻopau ana i ka māka lihi a hiki ke paʻa mālie i nā wafers ultra-thin (≤100 μm) a i ʻole warped. Hāʻawi ka mea i ka ikaika flexural ≥250 MPa a me ke kūpaʻa thermal a hiki i 400°C i ka lewa.
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Papa Hoʻolaha Kinoea Alumina no ke poʻo ʻauʻau CVD/PVD
Ua hana ʻia ka papa hoʻolaha kinoea (poʻo ʻauʻau) a St.Cera me ka mīkini kikoʻī mai ka seramika alumina 99.8% kiʻekiʻe. Loaʻa iā ia kahi pūʻulu o nā lua liʻiliʻi (diameters 0.3–1.5 mm) e hōʻoiaʻiʻo ana i ke kahe like ʻana o ke kinoea ma ka ʻili wafer i ka wā o nā kaʻina hana CVD, PVD, a i ʻole ALD. ʻO ka ikaika dielectric kiʻekiʻe o ka papa (>15 × 10⁶ V / m) a me ke kū'ē ʻana o ka plasma e pono ai no ka waiho ʻana o ka semiconductor thin-film.
