ʻO ka Silicon Carbide (SiC) Vacuum Chuck no nā wahi mahana kiʻekiʻe a me ka Plasma
Hana ʻia ka ʻūpā keramika SiC a St.Cera mai ka silicon carbide maʻemaʻe kiʻekiʻe (batch S1111, SiC 99.72%, Si manuahi 0.05%). Hāʻawi ia i ka ikaika flexural i ana ʻia o 449 MPa, ka paʻakikī haki o 3.12 MPa·m¹/², a me ka modulus elastic o 457 GPa. ʻO ka conductivity thermal maʻamau o ka mea (120–150 W/m·K) a me ka hoʻonui thermal haʻahaʻa (4.0–4.5 × 10⁻⁶/℃) e hiki ai ke piʻi wikiwiki i ka mahana a me ka warpage wafer liʻiliʻi i ka wā o ka thermal cycling. Hiki ke hoʻonohonoho ʻia ka ʻūpā ma ke ʻano he ʻūpā vacuum porous (kahe kinoea like) a i ʻole he ʻūpā maʻamau grooved. Me ka mahana hoʻohana kiʻekiʻe loa o 1600–1700°C (ʻaʻohe ukana) a me ke kūpaʻa plasma erosion koʻikoʻi, kūpono kēia ʻūpā no ka hana ʻana i ka wafer wela kiʻekiʻe (annealing, RTP) a me nā keʻena etch aggressive kahi e hōʻino ai nā ʻūpā alumina.
Nā kikoʻī(ma muli o ka hōʻike hoʻāʻo SiC S1111 i hāʻawi ʻia a me nā waiwai maʻamau):
| Waiwai | Waiwai |
| Mea Hana | SiC (99.72% SiC, 0.05% Si manuahi) |
| Ka nui o ka paʻa | 3.10–3.15 g/cm³ |
| Ka omo ʻana o ka wai | 0% |
| Ikaika Flexural | 449 MPa |
| Paʻakikī o ka haki | 3.12 MPa·m¹/² |
| Modulus Elastic | 457 GPa |
| Paʻakikī Vickers | 25–28 GPa |
| Ka Hoʻokele Wela | 120–150 W/m·K |
| CTE (25–1000°C) | 4.0–4.5×10⁻⁶/℃ |
| Ka Mahana Hoʻohana Loa (ʻaʻohe ukana) | 1600–1700°C |
| Palahalaha (ma luna o 300mm) | ≤5 μm |
| Hoʻopau ʻili | Ra ≤0.4 μm (pāʻani ʻia) |
Nā noi:
● Ke hoʻolei ʻana i ka mahana kiʻekiʻe (annealing, RTP, ulu epitaxial)
● ʻO ka ʻūpā etch plasma me ke kūpaʻa fluorine kiʻekiʻe
● Ka lawelawe ʻana i ka wafer lahilahi me ka hoʻomehana/hoʻoluʻu like
● ʻŌpū porous no ke kākoʻo wafer ʻaʻole pili
Hana ʻana:
ʻO ka sintering SiC → wili pololei o ka pālahalaha a me ka ʻaoʻao o ka ʻili → hoʻokumu ʻana i ka ʻano porous koho (no ka vacuum chuck) → lapping → hoʻomaʻemaʻe ultrasonic. Nānā ʻia kēlā me kēia chuck 100% no ka pālahalaha (laser interferometer) a me ke ʻano like o ka vacuum (hoʻāʻo kahe).
Mana Hoʻomalu Kūlana:
● Nānā ʻana i ke ana o ka CMM (ke anawaena, ka mānoanoa, nā kūlana o ka lua)
● Ana pālahalaha e like me ASTM
● Hoʻāʻo liki Helium (no nā ʻūpā vacuum)
● Ka hōʻoia ʻana o ka ikaika flexural i kēlā me kēia pūʻulu (hōʻike hoʻāʻo ref.)
Nā pono ma luna o nā Alumina Chucks:
● ʻOi aku ka wikiwiki o ka hoʻoili wela (120–150 vs 32 W/m·K no ka alumina) - 4× wikiwiki ka hoʻoili wela
● CTE haʻahaʻa (4.0 vs 7.2 × 10⁻⁶/℃) - hoʻemi i ke kaumaha wela o ka wafer
● Ke kūpaʻa plasma kiʻekiʻe - 10× lōʻihi ke ola ma ka fluorine etch
● ʻOi aku ka mahana hoʻohana kiʻekiʻe (1600°C vs 800°C no ka alumina)
Hoʻopilikino ʻana:
● ʻIli porous a ʻauwaha paha
● Anawaena 100–450 mm, poepoe a huinahā paha
● Apo sila lihi a i ʻole nā ʻāpana hakahaka ʻāpana
● Koho kākoʻo metala no ke kau ʻana me ke kūpaʻa kiʻekiʻe
Loaʻa nā ʻikepili mīkini a pau ma luna mai ka hōʻike hoʻāʻo i hāʻawi ʻia (batch S1111). He mea maʻamau nā waiwai wela a me ka paʻakikī no kēia papa SiC. Pono nā chucks SiC porous i ka hana hou aku; e ʻoluʻolu e nīnau no ka loaʻa ʻana o ka porosity a me ka nui o ka pore.
