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ʻO ka mea hoʻopau keramika Silicon Carbide (SiC) - ʻOʻoleʻa kiʻekiʻe no ka lawelawe ʻana i ka wafer mahana kiʻekiʻe

ʻO ka mea hoʻopau keramika Silicon Carbide (SiC) - ʻOʻoleʻa kiʻekiʻe no ka lawelawe ʻana i ka wafer mahana kiʻekiʻe

Wehewehe Pōkole:

Hana ʻia ka mea hoʻokō hope keramika SiC a St.Cera mai ka silicon carbide maʻemaʻe kiʻekiʻe (ʻike SiC 99.72%, Si manuahi 0.05%) me ka hoʻohana ʻana i ka mea S1111 batch. Hāʻawi ia i nā waiwai mechanical kūikawā: ikaika flexural 449 MPa (i ana ʻia), modulus elastic 457 GPa (i ana ʻia), a me ka paʻakikī Vickers 25–28 GPa (maʻamau). ʻO ka density haʻahaʻa (3.10–3.15 g/cm³, maʻamau) hāʻawi i kahi ʻoʻoleʻa kikoʻī kiʻekiʻe, kūpono no nā robots hoʻoili wafer wikiwiki. Me ka conductivity thermal o 120–150 W/m·K (maʻamau) a me ka coefficient hoʻonui thermal o 4.0–4.5 × 10⁻⁶/℃ (maʻamau), hoʻopau pono kēia mea hoʻokō hope i ka wela a mālama i ke kūpaʻa dimensional i ka wā o ka lawelawe ʻana i ka mahana kiʻekiʻe (a hiki i 1600–1700°C, ʻaʻohe ukana). ʻO ke kala ʻeleʻele/hina a me ka ʻole o ka omo wai e hōʻoia i ka launa pū ʻana o ka lumi maʻemaʻe.


Nā kikoʻī huahana

Nā Lepili Huahana

Hana ʻia ka mea hoʻokō hope keramika SiC a St.Cera mai ka silicon carbide maʻemaʻe kiʻekiʻe (ʻike SiC 99.72%, Si manuahi 0.05%) me ka hoʻohana ʻana i ka mea S1111 batch. Hāʻawi ia i nā waiwai mechanical kūikawā: ikaika flexural 449 MPa (i ana ʻia), modulus elastic 457 GPa (i ana ʻia), a me ka paʻakikī Vickers 25–28 GPa (maʻamau). ʻO ka density haʻahaʻa (3.10–3.15 g/cm³, maʻamau) hāʻawi i kahi ʻoʻoleʻa kikoʻī kiʻekiʻe, kūpono no nā robots hoʻoili wafer wikiwiki. Me ka conductivity thermal o 120–150 W/m·K (maʻamau) a me ka coefficient hoʻonui thermal o 4.0–4.5 × 10⁻⁶/℃ (maʻamau), hoʻopau pono kēia mea hoʻokō hope i ka wela a mālama i ke kūpaʻa dimensional i ka wā o ka lawelawe ʻana i ka mahana kiʻekiʻe (a hiki i 1600–1700°C, ʻaʻohe ukana). ʻO ke kala ʻeleʻele/hina a me ka ʻole o ka omo wai e hōʻoia i ka launa pū ʻana o ka lumi maʻemaʻe.

 

Nā kikoʻī(ma muli o ka hōʻike hoʻāʻo SiC S1111 i hāʻawi ʻia a me nā waiwai maʻamau):

Waiwai Waiwai
Mea Hana SiC (99.72% SiC, 0.05% Si manuahi)
Waihoʻoluʻu ʻEleʻele/Hinahina
Ka nui o ka paʻa 3.10–3.15 g/cm³
Ka omo ʻana o ka wai 0%
Ikaika Flexural 449 MPa (awelika)
Paʻakikī o ka haki 3.12 MPa·m¹/² (ʻawelika)
Modulus Elastic 457 GPa
Paʻakikī Vickers 25–28 GPa
Ka Hoʻokele Wela (25°C) 120–150 W/m·K
CTE (25–1000°C) 4.0–4.5×10⁻⁶/℃
Ka Mahana Hoʻohana Loa (ʻaʻohe ukana) 1600–1700°C

 

Nā noi:

● Ka lawelawe ʻana i ka wafer wela kiʻekiʻe (post-anneal, RTP, epitaxy)

● Nā keʻena etch plasma e koi ana i ke kūpaʻa kiʻekiʻe o ka erosion

● Nā lopako hoʻoili wikiwiki (māmā, paʻakikī kiʻekiʻe)

 

Hana ʻana:

ʻO ka pauka SiC sintering → wili CNC pololei o ka ʻaoʻao lima a me nā hiʻohiʻona kau ʻana → lapping ʻili → hoʻomaʻemaʻe ultrasonic. Nānā 100% dimensional a me ka hoʻāʻo leaka helium no nā noi vacuum.

 

Mana Hoʻomalu Kūlana:

● Nānā ʻana o CMM i ka lōʻihi, ka laulā, a me ka palahalaha

● Hoʻāʻo ikaika flexural i kēlā me kēia pūʻulu (e like me ke kūlana hōʻike hoʻāʻo)

● Nānā maka ma lalo o ka microscope no nā kīnā o ka ʻili

 

Nā pono ma mua o ka Alumina a i ʻole ka Metala:

● 2× modulus elastic kiʻekiʻe aʻe (457 vs ~380 GPa no ka alumina) - emi ka deflection

● 3× ʻoi aku ka kiʻekiʻe o ka conductivity thermal - wikiwiki ka hoʻopuehu ʻana i ka wela

● Kūpaʻa i ka >1600°C e kū'ē i ka 800°C o ka alumina i ka lewa

● Haʻahaʻa ka nui ma mua o ke kila - hōʻemi kaumaha 40%

 

Hoʻopilikino ʻana:

Nā lōʻihi 150–450 mm, nā ʻano o ka piko (ka paʻa ʻana o ka lihi, Bernoulli, pālahalaha), nā ʻano flange kau ʻana e like me ke kaha kiʻi OEM.

*ʻO nā ʻikepili mīkini a pau ma luna nei mai ka hōʻike hoʻāʻo i hāʻawi ʻia (batch S1111). ʻO nā waiwai wela a me ka paʻakikī he mea maʻamau no kēia papa SiC; e ʻoluʻolu e kelepona mai iā mākou no ka hōʻoia kikoʻī o ka lot.*


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