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ʻO Bernoulli Ceramic End Effector — Ka lawelawe ʻana i ka Wafer Non-Contact no nā Wafers Lahilahi a Palupalu

ʻO Bernoulli Ceramic End Effector — Ka lawelawe ʻana i ka Wafer Non-Contact no nā Wafers Lahilahi a Palupalu

Wehewehe Pōkole:

Hoʻohana ka mea hoʻokō hopena keramika Bernoulli a St.Cera i ka hāpai aerodynamic e lawelawe i nā wafers me ka ʻole o ka hoʻopili kino. Hana ʻia mai ka 99.8% alumina (Al₂O₃) a i ʻole silicon carbide (SiC) maʻemaʻe kiʻekiʻe, hōʻike ia i nā nozzles mīkini kikoʻī e hoʻokuke i ke kinoea i hoʻopaʻa ʻia e hana i kahi ʻili ea lahilahi ma waena o ka mea hoʻokō hopena a me ka wafer. Hoʻopau kēia kumumanaʻo pili ʻole i ka haumia ma hope, ka ʻoki ʻana o ka lihi, a me ka hōʻino ʻana o ka ʻili, e kūpono ia no nā wafers lahilahi (≤100 μm), palupalu, a i ʻole nā ​​​​wafers warped. Hāʻawi ka substrate keramika i ka ikaika flexural kiʻekiʻe (361 MPa no Al₂O₃; a hiki i 550-600 MPa no SiC), ka nuipa haʻahaʻa, a me ke kūpaʻa dimensional maikaʻi loa, e hōʻoia ana i ke kūlana hana hou ʻia i nā robots hoʻoili wafer wikiwiki kiʻekiʻe.


Nā kikoʻī huahana

Nā Lepili Huahana

Hoʻohana ka mea hoʻokō hopena keramika Bernoulli a St.Cera i ka hāpai aerodynamic e lawelawe i nā wafers me ka ʻole o ka hoʻopili kino. Hana ʻia mai ka 99.8% alumina (Al₂O₃) a i ʻole silicon carbide (SiC) maʻemaʻe kiʻekiʻe, hōʻike ia i nā nozzles mīkini kikoʻī e hoʻokuke i ke kinoea i hoʻopaʻa ʻia e hana i kahi ʻili ea lahilahi ma waena o ka mea hoʻokō hopena a me ka wafer. Hoʻopau kēia kumumanaʻo pili ʻole i ka haumia ma hope, ka ʻoki ʻana o ka lihi, a me ka hōʻino ʻana o ka ʻili, e kūpono ia no nā wafers lahilahi (≤100 μm), palupalu, a i ʻole nā ​​​​wafers warped. Hāʻawi ka substrate keramika i ka ikaika flexural kiʻekiʻe (361 MPa no Al₂O₃; a hiki i 550-600 MPa no SiC), ka nuipa haʻahaʻa, a me ke kūpaʻa dimensional maikaʻi loa, e hōʻoia ana i ke kūlana hana hou ʻia i nā robots hoʻoili wafer wikiwiki kiʻekiʻe.

Nā memo no nā mea hana:ʻO Alumina (Al₂O₃) ka mea i hoʻohana nui ʻia no nā mea hoʻopau keramika i ka lawelawe ʻana i ka wafer semiconductor ma muli o kona hui maikaʻi loa o ka paʻakikī, ka insulation uila, ke kūpaʻa kemika, a me ke kumukūʻai kūpono. Hāʻawi ʻo Silicon carbide (SiC) i ka conductivity thermal kiʻekiʻe, ka paʻakikī kiʻekiʻe, a me ke kūpaʻa ʻaʻahu maikaʻi loa no nā noi koi nui loa. ʻOiai ʻo yttria-stabilized zirconia (ZrO₂) e hāʻawi ana i ka paʻakikī haki kiʻekiʻe ma ka mahana o ka lumi, ʻaʻole i hoʻohana pinepine ʻia i kēia noi ma muli o kona density kiʻekiʻe a me nā ʻano hoʻonui thermal like ʻole; hiki ke noʻonoʻo ʻia no nā hiʻohiʻona kikoʻī kahi e pono ai ka paʻakikī haki kūikawā. E ʻoluʻolu e nīnau i kā mākou hui loea no ke alakaʻi koho mea.

 

Nā kikoʻī(ma muli o 99.8% AlO):


Waiwai
  Waiwai (AlO)
Mea Hana   99.8% Alumina
Ka nui o ka paʻa   3.93 g/cm³
Ikaika Flexural   361 MPa
Paʻakikī o ka haki   3–4 MPa·m¹/²
Paʻakikī Vickers   16 GPa
Modulus o Young   380 GPa
Hoʻonui Wela (25–1000°C)   7.2×10⁻⁶/℃
Mahana Hana Loa   800°C (ea)
ʻO ka ʻilikai (e kū pono ana i ka wafer)   Ra ≤0.4 μm

 

Kumu Hana:

Hoʻolako ʻia ka ea i hoʻopaʻa ʻia a i ʻole ka naikokene (0.2–0.6 MPa) ma o nā kahawai kūloko a puka i waho ma o nā nozzles kikoʻī. Hoʻokumu ka holo ʻana o ke ea i hoʻolalelale ʻia i kahi ʻāpana haʻahaʻa ma luna o ka hopena hopena (hopena Bernoulli), e hoʻoulu ana i ka ikaika hāpai e kākoʻo ana i ka wafer ma kahi āpau o 50–200 μm. ʻAʻohe lua vacuum a i ʻole nā ​​​​pads e pili ana i ka ʻaoʻao hope o ka wafer.

 

Nā noi:

  • · Ka lawelawe ʻana i ka wafer lahilahi (≤50 μm) ma hope o ka wili ʻana i ka ʻaoʻao hope
  • · Ka lawe ʻana o ka wafer i hoʻololi ʻia (e laʻa, ma hope o CVD a i ʻole annealing)
  • · Hoʻoili ʻana o ke kelepona lā a me ka substrate sapphire LED
  • · ʻO ka automation lumi maʻemaʻe e koi ana i ka hana ʻana o nā ʻāpana ʻole
  • · Ka lawelawe ʻana i nā panela aniani i ka hana hōʻikeʻike

 

Kaʻina Hana Hana:

ʻO ka substrate seramika i sintered mai ka pauka maʻemaʻe kiʻekiʻe → 5-axis CNC machining o nā kahawai kinoea a me nā lua nozzle (diameter 0.3–1.0 mm, tolerance ±0.01 mm) → lapping surface i Ra ≤0.4 μm → ultrasonic cleaning → helium leak test (gas channels). ʻAʻohe uhi e pono ai - ʻaʻohe kemika o ka ʻili seramika ʻōlohelohe a ʻaʻole haumia.

 

Mana Hoʻomalu Kūlana:

  • · Nānā 100% dimensional (CMM) o nā kūlana nozzle, ka lōʻihi o ka lima, a me ka palahalaha
  • · Hoʻāʻo like ʻana o ke kahe ʻana o ka ea: hāʻule kaomi ≤5% ma nā nozzles āpau
  • · Hoʻāʻo leaka: ua hoʻopaʻa ʻia nā kahawai kinoea ma 0.6 MPa, ʻaʻohe hāʻule kaomi ma luna o 30 kekona
  • · Nānā maka ma lalo o ka microscope 20× no nā micro-māwae a i ʻole nā ​​​​​​burrs

 

Anā pono ma luna o nā mea hoʻopau hoʻopili kuʻuna:

  • · ʻAʻohe haumia o ka ʻaoʻao hope o ka wafer — ʻaʻohe pili mechanical
  • · ʻAʻohe ʻoki lihi a haki paha o nā wafers lahilahi
  • · Hoʻohana i nā wafers i wili ʻia (a hiki i ka 1 mm kakaka) me ka hakahaka paʻa
  • · Hoʻopau i ka mīkini hana vacuum a me ka mālama ʻana i ka porous chuck
  • · Kūʻē ke kūkulu ʻana i ka seramika i ka ʻaʻahu a me ka hoʻouka kemika

 

Hoʻopilikino ʻana:

  • · Loaʻa no 200 mm, 300 mm, a i ʻole nā ​​​​nui wafer maʻamau
  • · Nā ʻano nozzle kinoea: nā ʻano pololei, kihi, a i ʻole nā ​​​​​​ʻano vortex
  • · Nā Mea Hana: alumina (maʻamau) a i ʻole silicon carbide (no ka conductivity wela kiʻekiʻe loa a me ke kūpaʻa ʻana i ka ʻaʻahu)
  • · Ka lōʻihi o ka lima, ka flange kau ʻana, a me kahi o ke awa kinoea ma ke kaha kiʻi OEM

 

Nā Palena:

ʻO ka hoʻokō ʻana o ke kumumanaʻo Bernoulli (hoʻolālā nozzle, ka hakahaka ea) ʻaʻole i kaupalena ʻia e nā papa waiwai mea i hāʻawi ʻia. Hoʻopili pono nā waiwai mechanical a me thermal ma luna i nā pepa ʻikepili i hāʻawi ʻia no 99.8% Al₂O₃. ʻAʻole manaʻo ʻia ka hōʻemi ʻana o ka hana o ka keramika ma lalo o ke kahe kinoea i hoʻopaʻa ʻia ma muli o kēia mau waiwai mea. No nā wafers i maʻalahi i ke kahe kinoea (e laʻa, MEMS me nā ʻano palupalu), pono e hoʻoponopono ʻia ke kaomi kinoea a me ka hoʻolālā nozzle e like me ia.


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